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| savantic semiconductor product specification silicon pnp power transistors 2SA490 d escription with to-220 package complement to type 2sc790 applications for power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -50 v v ceo collector- emitter voltage open base -40 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a i e emitter current 3 a p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA490 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ,i b =0 -40 v v (br)ebo emitter-base breakdown voltage i e =-10ma; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-2a; i b =-0.2a -0.45 -1.2 v v be base-emitter voltage i c =-2a ; v ce =-2v -0.85 -1.8 v i cbo collector cut-off current v cb =-30v; i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -100 a h fe-1 dc current gain i c =-0.5a ; v ce =-2v 40 240 h fe-2 dc current gain i c =-2a ; v ce =-2v 13 50 c ob collector output capacitance i e =0 ; v cb =-10v;f=1mhz 150 pf f t transition frequency i c =-0.5a ; v ce =-2v 3 mhz h fe-1 classifications r o y 40-80 70-140 120-240 savantic semiconductor product specification 3 silicon pnp power transistors 2SA490 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm) |
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